First we must consider these imperfect amplifiers. The later feedback and precision circuits would be useless without them!
More strictly, in case of non-linear behaviour, we define
a = [(dIcollector)/( dIemitter)]
The ratio of the collector current to the base current is normally called b. Thus, b = [(Icollector)/( Ibase)] From this we can get
b = [(a)/( 1-a)].
More strictly, in case of non-linear behaviour, we define
a = [(dIcollector)/( dIemitter)]
Hence (1-a)b = a
a = [(b)/( 1+b)]
By arranging the geometry so that the base region is very thin, most of the electrons entering from the emitter into the base will be fall over the edge down the steep electric potential fall of the base-collector junction before they meet and recombine with holes in the base.
Thus, by making the base be very thin so that the emitter-base junction and the collector-base junction are very close, and doping the collector-base junction so that it is very thin (with a high electric field [E\vec] = -[dV/ dx], the fraction a of the electrons leaving the emitter and going to the collector instead of the base can be made close to 1.0 and
b = [(a)/( 1-a)] can be made large. This can make the transistor more useful.
While a transistor with a large b, such as b = 100, can be used to make amplifiers with a high gain, the thin base and collector-base junction have a general defect. This defect is that the thin collector-base junction will have high electric fields [E\vec] and avalanche breakdown may occur.
So long as the collector-base voltage is greater than about 2 or 3 volts, very few of the electrons which fall over the collector-base junction can bounce back.
Thus, So long as the collector-base voltage is greater than about 2 or 3 volts, the fraction a of electrons passing through both junctions is only slightly dependent upon the collector-base voltage.
A typical set of Icollector and VCollector-Emitter curves for equispaced base currents are shown below.
Although the following curves are not usually shown in specifications,
the following shows ICollector and IBase curves for equispaced
collector voltages.
The b may vary from one transistor to another due to manufacturing variations and due to changing temperature. Note that IC in the following graph has a logarithmic horizontal scale and covers a very wide rage.
Even though b does not change much with voltage and current, in any
given transistor, the variation in b due to temperature and manufacturing
is significant.
The variation due to manufacturing, can be minimized by selecting transistors
with particular values of b.
In most practical circuits, we try to make the action be independent of b.
This can be done in a variety of ways but will require that b be large so that b >> 1 and we can approximate functions like b+1 as b.
The transistor is said to be in saturation if the collector voltage is too low.
A maximum current into the collector IC max through its connecting wire and weld.
A maximum voltage on the collector-base junction VCE max above which the junction may break down.
We want a 3-terminal model which we can use to ``replace the transistor'' when want to make calculations. In this model we assume
The Base-Collector voltage is sufficient for the transistor to have a b > 10
A common convention is to use lower case r for each of the internal resistances to distinguish them from the normal external resistors we attach to the emitter, base and collector.
We will call the join of the 3 lines as the point ``join''.
We replace the base to emitter junction with a small 0.7 volt battery with a small (perhaps negligible resistor rb.
The current through the base is called Ib.
From the previous discussion of p,n junctions, we know
that the emitter has the dynamic junction impedance (which may also be negligible)
of about
re = 2 ohm + [0.026 volt/( Ibase)].
We insert a ``Current Generator'' in the collector to cause a current
IC = bIb.
The simple transistor model suggests how an amplifier might be made. We call this a grounded emitter amplifier.
Variations DVinput in the base input voltage will cause
variations in the emitter current
through rb.
The transistor can be replaced for calculation purposes by the
transistor model as in the next diagram.
If, as usual, re is small, then
DIb = [(DVinput)/( RB+rb)]
and these will cause variations in the collector current
DIc = bDIb = b [(DVinput)/( RB+rb)]
The changing collector current flows through the collector resistor Rc from a constant voltage usually called ``Vcc'' and so the changing collector current causes the collector voltage to change by
DVC = - RC b [(DVinput)/( RB+rb)]
DVC = -([( RC b )/( RB+rb)]).DVinput
Thus a small change in the input to the base can cause a larger change in the voltage of the collector.
In general, the grounded emitter gives a high amplification but the voltage gain [(Vc)/( Vb)] is too unpredictable for this circuit to be used except in digital circuits.
The following three amplifying circuits include some type of ``negative feedback'' to overcome these problems. Other circuits use transistors in identical pairs and use them to amplify pairs of voltages (one the signal and the other a constant voltage or a negative signal) so that some of the unwanted effects can cancel.
This has 3 resistors as shown RB, RE and RC attached to
the base, emitter and collector.
The top ``rail'' is attached to a positive power supply (perhaps +10 Volt).
The lower ``rail'' is the ground.
The input is on the left (via the resistor RB. The output is on the right from the collector pin attached to the resistor RC.
Apply a small incremental voltage DVin to the resistor RB leading to the base.
The transistor can be replaced for calculation purposes by the transistor model as in the next diagram.
We concern ourselves only with the current and voltage increments so can
ignore the +0.7 volt battery.
Define the voltage on the point below the current generator at the join
of the 3 lines as DVjoin
We can obtain 2 equations.
DIBase = [(DVin-DVjoin)/( RB+rb)]
DICollector = bDIBase
The voltage increment across the actual resistor RE and the internal resistance re totalling RE+re, due to the two currents caused by the voltage increment DVin is
DVjoin = (1+b)DIBase(RE+re)
From these two equations
DIBase = [(DVin- (1+b)DIBase(RE+re))/( RB+rb)]
(RB+rb)DIBase = DVin- (1+b)DIBase(RE+re)
(RB+rb)DIBase + (1+b)DIBase(RE+re) = DVin
(RB+rb + (1+b)(RE+re))DIBase = DVin
DIBase = [( DVin)/( (RB+rb + (1+b)(RE+re)))]
From this, we can calculate 3 important parameters for this circuit.
DVC = -DICRC
DVC = -bDIBaseRC
DVC = -b[(DVin)/( (RB+rb + (1+b)(RE+re)))]RC
Thus the voltage gain of this common emitter circuit is
AV = [(DVC)/( DVin)] = -[(bRC)/( (RB+rb + (1+b)(RE+re)))]
If we neglect both rb and re, then
AV » -[(b(RC))/( (RC + (1+b)RE))]
again, if we assume that b >> 1, the voltage gain, AV, becomes
AV » -[(RC)/( RE)]
Notes.
Using the concepts of feedback, we say that the resistor RE is providing
negative feedback so that in the approximations of b being high and
rb and re being low,
the voltage gain AV is
minus(the ratio of the collector and emitter resistances)
The Input Impedance is the ratio
Zin = [(DVin)/( DIBase)]
Use DIBase from above
Zin = (RB+rb + (1+b)(RE+re))
Again, if we neglect rb and re and assume that b >> [(RB)/( RE)] then
Zin = bRE
Remembering that the impedance of a current generator is infinite, the output
impedance of the circuit looking back into the circuit is only that of the
resistor RC to the power supply which is a virtual ground.
Thus we have
Zout = RC
This has 2 resistors as shown RB and RE attached to
the base and emitter.
The top ``rail'' is attached to a positive power supply (perhaps +10 Volt).
The lower ``rail'' is the ground.
The Collector is attached directly to the top rail at +10 Volt.
The input is on the left (via the resistor RB. The output is on the right from the emitter pin attached to the resistor RE.
Apply a small incremental voltage vin to the resistor RB leading to the base.
The transistor can be replaced for calculation purposes by the transistor model.
Apply a small incremental voltage DVin to the resistor RB leading to the base.
We concern ourselves only with the current and voltage increments so can
ignore the +0.7 volt battery.
Define the voltage on the point below the current generator at the join
of the 3 lines as DVjoin
As with the Common Emitter before, we can obtain 2 equations.
DIBase = [(DVin-DVjoin)/( RB+rb)]
DICollector = bDIBase
The voltage increment across the actual resistor RE and the internal resistance re totalling RE+re, due to the two currents caused by the voltage increment DVin is
DVjoin = (1+b)DIBase(RE+re)
From these two equations
DIBase = [(DVin- (1+b)DIBaseRE)/( RB+rb)]
(RB+rb)DIBase = DVin- (1+b)DIBase(RE+re)
(RB+rb)DIBase + (1+b)DIBase(RE+re) = DVin
(RB+rb + (1+b)(RE+re)DIBase = DVin
DIBase = [( DVin)/( (RB+rb + (1+b)(RE+re)))]
From this, we can calculate 3 important parameters for this circuit.
The current through the emitter is
DIEmitter = (1+b)DIBase
The voltage increment across RE is the output signal DVout
DVout = DIEmitter RE
DVout = (1+b)[( DVin)/( (RB+rb + (1+b)(RE+re)))] RE
DVout = [((1+b)RE)/( (RB+rb + (1+b)(RE+re)))]DVin
If we neglect re and rb
DVout » [((1+b)RE)/( (RB + (1+b)RE))]DVin
If b >> 1, then
DVout » [((1+b)RE)/( (RB + (1+b)RE))]DVin
The voltage Gain
AV = [(DVout)/( DVin)] » [((1+b)RE)/( (RB + (1+b)(RE)))]
If (RB << (1+b)RE then
AV = 1.0
The Input Impedance of the common collector (emitter follower) circuit
The Input Impedance is the ratio
Zin = [(DVin)/( DIBase)]
Use DIBase from above
Zin = (RB+rb + (1+b)(RE+re))
Again, if we neglect rb and re and assume that b >> [(RB)/( RE)] then
Zin = bRE
To calculate this, we assume no change to Vin (ie DVin = 0) but draw a small current DIout from the output (emitter pin) and calculate or measure the resulting DVout.
We concern ourselves only with the current and voltage increments so can ignore the +0.7 volt battery. Again, define the voltage on the point below the current generator at the join of the 3 lines as DVjoin
As with the Common Emitter before, we can obtain 2 equations.
Vjoin = (b+1)DIbase re + ((1+b)DIbase-DIout)RE
-DIbase(RB+rb = (b+1)DIbase re + ((1+b)DIbase-DIout)RE
Grouping the Ibase terms on the right
DIoutRE = DIbase[RB+rb+(1+b)(re+RE)]
DIbase = [(DIoutRE)/( [RB+rb+(1+b)(re+RE)])]
The change in the output voltage DVout is due to the two changes in current through RE
DVout = ((increase in emitter current)-(current drawn from output))RE
DVout = ((1+b)DIbase-DIout)RE
DVout = ((1+b)[(DIoutRE)/( [RB+rb+(1+b)(re+RE)])] -DIout)RE
The Output impedance is
Zout = -[(DVout)/( DIout)] = -(1+b)[(RE2)/( [RB+rb+(1+b)(re+RE)])] +RE
Zout = -(1+b)[(RE2)/( [RB+rb+(1+b)(re+RE)])] +RE
Zout = -[((1+b)RE2)/( [RB+rb+(1+b)(re+RE)])] +RE
Zout = [(-(1+b)RE2+[RB+rb+(1+b)(re+RE)]RE)/( [RB+rb+(1+b)(re+RE)])]
Zout = [(+[RB+rb+(1+b)(re)]RE)/( [RB+rb+(1+b)(re+RE)])]
If rb and re are very small
Zout = [(RBRE)/( [RB+(1+b)RE])]
If b is large
Zout = [(RB)/( 1+b)]
The output impedance has been lowered to a fraction [1/( 1+b)] of the RB. In this way, an emitter follower (common collector circuit) can be used to lower the effective output impedance of any device which might have had an output impedance of RE.
By adding an emitter follower after the another circuit, the output impedance of the combination may be lowered by a factor of about b.
This has 2 resistors as shown RE and RC attached to
the emitter and collector.
The top ``rail'' is attached to a positive power supply (perhaps +10 Volt).
The lower ``rail'' is the ground.
The Base is attached directly to a constant voltage, say +3.0 volt and so can act as a common reference point for both the input side and the output side.
Define the voltage on the point below the current generator at the join of the 3 lines as DVjoin. Define the voltage on the point X below the current generator as DVX.
The transistor can be replaced for calculation purposes by the transistor model as in the next diagram.
We will later apply a small incremental voltage DIin to the point X between the
resistor RE and the emitter.
The Transistor Model gives us the equivalent circuit for incremental voltages and currents.
If Vb = +3.0 volt, then
| (1) |
The current through the resistor RE and internal resistance re is IC+Ib = (b+ 1)Ib
The voltage at point ``join'' is
Vjoin = (IC+Ib)(re+RE)
| (2) |
| (3) |
Use equations 1 and 2 to eliminate Vjoin.
2.7 volt - rbIb = (b+ 1)Ib(re+RE)
Ib = [2.7 volt/( rb+(b+1)(re+RE))]
Substitute this Ib into equation 3.
| (4) |
--------
The Transistor Model gives us the equivalent circuit for incremental voltages and currents. Calculate the new values for Vjoin, IC, Ib, and VC.
If Vb = +3.0 volt, then
| (5) |
The current through internal resistance re is IC+Ib = (b+ 1)Ib. However the current through the resistor RE will differ due to the input signal.
The voltage at point ``join'' is
Vjoin = (IC+Ib)re+(IC+Ib+DIin)RE
| (6) |
| (7) |
Use equations 5 and 6 to eliminate Vjoin.
2.7 volt - rbIb = ((b+1)Ib)re+((b+1)Ib+DIin)RE
This can be simplified
2.7 volt-DIinRE = (rb+(b+1)(re+RE))Ib
Ib = [(2.7 volt-DIinRE)/( rb+(b+1)(re+RE))]
Substitute this Ib into equation 7.
| (8) |
| (9) |
If re and rb are small,
| (10) |
| (11) |
Note
The output DVout is the same as if the injected current DIin were subtracted by the transistor from its current through the resistor RC to keep the current through RE constant. The current through the resistor RC changes by -DIin causing an output voltage excursion DVout » +DIinRC which has the same polarity as the input current signal.
The Input Impedance of the common base circuit
The Output Impedance of the common base circuit
A simple way of ``biassing'' the AC common emitter is to add two resistances
with resistances higher than the emitter resistor so that the ``drain current''
draining down through both ``bias resistors'' satisfies two requirements.
Often, these two conditions imply that the bias resistors must be kept between two limits which are a factor of about b apart. For example, if b is about b = 65, then choose bias resistors giving the following.
The parallel impedance of the two bias resistors about 8 times the output impedance of the previous amplifier.
The circuit is similar to the previous common emitter amplifier but the
biasing structure has been changed to include some negative feedback from
output signal on the collector.
As a result, this circuit gives an amplification which is more
predictable in spite of variations in the b of the transistor.